Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
NexFET
Tip pachet
VSONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Latime
5mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
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Buc. (Livrat pe rola) (fara TVA)
€ 1,309
Buc. (Livrat pe rola) (cu TVA)
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Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
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50 - 95 | € 0,85 | € 4,25 |
100+ | € 0,64 | € 3,20 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
NexFET
Tip pachet
VSONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Latime
5mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs