Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
73 A
Maximum Drain Source Voltage
30 V
Serie
NexFET
Tip pachet
VSONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
4 nC @ 4.5 V
Latime
5mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,34
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,405
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 0,34
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,405
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
73 A
Maximum Drain Source Voltage
30 V
Serie
NexFET
Tip pachet
VSONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
4 nC @ 4.5 V
Latime
5mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs