Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
SON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Latime
5.1mm
Transistor Material
Si
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Inaltime
1.05mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
Standard
5
P.O.A.
Standard
5
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
SON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Latime
5.1mm
Transistor Material
Si
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Inaltime
1.05mm
Detalii produs