Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
25 V
Tip pachet
SON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5.8mm
Typical Gate Charge @ Vgs
2.9 nC @ 4.5 V
Inaltime
1.1mm
Serie
NexFET
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
25 V
Tip pachet
SON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5.8mm
Typical Gate Charge @ Vgs
2.9 nC @ 4.5 V
Inaltime
1.1mm
Serie
NexFET
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs