Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Serie
NexFET
Tip pachet
WSON
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Latime
2mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.8mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
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Buc. (Livrat pe rola) (cu TVA)
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€ 0,20
Buc. (Livrat pe rola) (fara TVA)
€ 0,238
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Serie
NexFET
Tip pachet
WSON
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Latime
2mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.8mm
Detalii produs