Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Tip pachet
ITO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
10mm
Latime
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Inaltime
15mm
Temperatura minima de lucru
-55 °C
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P.O.A.
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P.O.A.
1000
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Tip pachet
ITO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
10mm
Latime
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Inaltime
15mm
Temperatura minima de lucru
-55 °C