Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
80 V
Tip pachet
M250
Timp montare
Surface Mount
Numar pini
3
Channel Mode
Enhancement
Maximum Power Dissipation
108 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Latime
6.09mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Transistor Material
Si
Lungime
9.91mm
Inaltime
3.94mm
Typical Power Gain
17.7 dB
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
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Incercati din nou mai tarziu
€ 153,28
Each (In a Tray of 25) (fara TVA)
€ 182,403
Each (In a Tray of 25) (cu TVA)
25
€ 153,28
Each (In a Tray of 25) (fara TVA)
€ 182,403
Each (In a Tray of 25) (cu TVA)
25
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
80 V
Tip pachet
M250
Timp montare
Surface Mount
Numar pini
3
Channel Mode
Enhancement
Maximum Power Dissipation
108 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Latime
6.09mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Transistor Material
Si
Lungime
9.91mm
Inaltime
3.94mm
Typical Power Gain
17.7 dB
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.