Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum Collector Emitter Voltage
125 V
Tip pachet
TO-3
Montare
Through Hole
Maximum Power Dissipation
300 W
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Dimensiuni
8.7 x 39.5 x 26.2mm
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
P.O.A.
STMicroelectronics BUT100 NPN Bipolar Transistor, 125 V, 3-Pin TO-3
1
P.O.A.
STMicroelectronics BUT100 NPN Bipolar Transistor, 125 V, 3-Pin TO-3
Informatii indisponibile despre stoc
1
Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum Collector Emitter Voltage
125 V
Tip pachet
TO-3
Montare
Through Hole
Maximum Power Dissipation
300 W
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Dimensiuni
8.7 x 39.5 x 26.2mm