Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
HSO8-F4-B
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.9mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+85 °C
Lungime
4.9mm
Typical Gate Charge @ Vgs
37 nC @ 4.5 V
Inaltime
0.95mm
Dimensiune celula
SK
Temperatura minima de lucru
-40 °C
Detalii produs
N-Channel MOSFET, Panasonic
MOSFET Transistors, Panasonic
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P.O.A.
10
Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
HSO8-F4-B
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.9mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+85 °C
Lungime
4.9mm
Typical Gate Charge @ Vgs
37 nC @ 4.5 V
Inaltime
0.95mm
Dimensiune celula
SK
Temperatura minima de lucru
-40 °C
Detalii produs