Documente tehnice
Specificatii
Marca
PanasonicChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
12 V
Dimensiune celula
MTM
Tip pachet
Smini3-G1-B
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Latime
1.25mm
Inaltime
0.8mm
Detalii produs
P-Channel MOSFET, Panasonic
MOSFET Transistors, Panasonic
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P.O.A.
50
P.O.A.
50
Documente tehnice
Specificatii
Marca
PanasonicChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
12 V
Dimensiune celula
MTM
Tip pachet
Smini3-G1-B
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Latime
1.25mm
Inaltime
0.8mm
Detalii produs