Documente tehnice
Specificatii
Frecventa minima de auto-rezonanta
-50°C
Maximum Switching Power AC
1.25 kVA
Temperatura maxima de lucru
+70°C
Curent de comutare
5A
Bobina de izolare la contact
2kV rms
Maximum Switching Voltage AC
250V ac
Material de contact
Gold Plated
Coil Voltage
24V dc
Montare
PCB Mount
Tip terminal
Through Hole
Configurare contact
4PDT
Lungime
20.8mm
Durata de viata
100000000 (DC Mechanical) cycles, 200000 (Electrical) cycles, 50000000 (AC Mechanical) cycles
Adancime
27.2mm
Coil Power
900mW
Inaltime
35.2mm
Rezistenta bobina
650 <ohm/>
Marca
PanasonicTara de origine
Japan
Detalii produs
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Documente tehnice
Specificatii
Frecventa minima de auto-rezonanta
-50°C
Maximum Switching Power AC
1.25 kVA
Temperatura maxima de lucru
+70°C
Curent de comutare
5A
Bobina de izolare la contact
2kV rms
Maximum Switching Voltage AC
250V ac
Material de contact
Gold Plated
Coil Voltage
24V dc
Montare
PCB Mount
Tip terminal
Through Hole
Configurare contact
4PDT
Lungime
20.8mm
Durata de viata
100000000 (DC Mechanical) cycles, 200000 (Electrical) cycles, 50000000 (AC Mechanical) cycles
Adancime
27.2mm
Coil Power
900mW
Inaltime
35.2mm
Rezistenta bobina
650 <ohm/>
Marca
PanasonicTara de origine
Japan
Detalii produs
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.