Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 → 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SSMini3 F3 B
Numar pini
3
Dimensiuni
1.6 x 0.85 x 0.7mm
Temperatura maxima de lucru
+150 °C
Lungime
1.6mm
Inaltime
0.7mm
Latime
0.85mm
Tara de origine
China
Detalii produs
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 → 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SSMini3 F3 B
Numar pini
3
Dimensiuni
1.6 x 0.85 x 0.7mm
Temperatura maxima de lucru
+150 °C
Lungime
1.6mm
Inaltime
0.7mm
Latime
0.85mm
Tara de origine
China
Detalii produs
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.