Documente tehnice
Specificatii
Timp de scadere tipic
6µs
Timp de crestere tipic
6µs
Number of Channels
1
Maximum Light Current
>400µA
Maximum Dark Current
1 (≤ 50)nA
Angle of Half Sensitivity
±18 °
Polarity
NPN
Number of Pins
2
Timp montare
Through Hole
Tip pachet
Miniature Array
Dimensiuni
2.2 x 2 x 3.45mm
Collector Current
50mA
Maximum Wavelength Detected
1100nm
Minimum Wavelength Detected
450nm
Spectral Range of Sensitivity
450 → 1100 nm
Lungime
2.2mm
Latime
2mm
Linearity
High
Dimensiune celula
BPX 81
Emitter Collector Voltage
7V
Collector Emitter Voltage
35V
Saturation Voltage
150mV
Inaltime
3.45mm
Tara de origine
China
Detalii produs
Phototransistor Miniature Package
Phototransistors, OSRAM Opto Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
10
P.O.A.
10
Documente tehnice
Specificatii
Timp de scadere tipic
6µs
Timp de crestere tipic
6µs
Number of Channels
1
Maximum Light Current
>400µA
Maximum Dark Current
1 (≤ 50)nA
Angle of Half Sensitivity
±18 °
Polarity
NPN
Number of Pins
2
Timp montare
Through Hole
Tip pachet
Miniature Array
Dimensiuni
2.2 x 2 x 3.45mm
Collector Current
50mA
Maximum Wavelength Detected
1100nm
Minimum Wavelength Detected
450nm
Spectral Range of Sensitivity
450 → 1100 nm
Lungime
2.2mm
Latime
2mm
Linearity
High
Dimensiune celula
BPX 81
Emitter Collector Voltage
7V
Collector Emitter Voltage
35V
Saturation Voltage
150mV
Inaltime
3.45mm
Tara de origine
China
Detalii produs