Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
57.8 A
Maximum Drain Source Voltage
100 V
Tip pachet
WDFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
15.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
77.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
3.3mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Inaltime
0.75mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
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€ 0,62
Buc. (Pe o rola de 1500) (fara TVA)
€ 0,738
Buc. (Pe o rola de 1500) (cu TVA)
1500
€ 0,62
Buc. (Pe o rola de 1500) (fara TVA)
€ 0,738
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
57.8 A
Maximum Drain Source Voltage
100 V
Tip pachet
WDFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
15.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
77.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
3.3mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Inaltime
0.75mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101