Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
370 A
Maximum Drain Source Voltage
40 V
Dimensiune celula
NVMFS5C404NL
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
4 + Tab
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Latime
6.1mm
Lungime
5.1mm
Typical Gate Charge @ Vgs
181 nC @ 10 V
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
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Buc. (Pe o rola de 1500) (cu TVA)
1500
€ 2,08
Buc. (Pe o rola de 1500) (fara TVA)
€ 2,475
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
370 A
Maximum Drain Source Voltage
40 V
Dimensiune celula
NVMFS5C404NL
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
4 + Tab
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Latime
6.1mm
Lungime
5.1mm
Typical Gate Charge @ Vgs
181 nC @ 10 V
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs