Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
80 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Lungime
6.1mm
Latime
5.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Inaltime
1.05mm
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Buc. (Pe o rola de 1500) (fara TVA)
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Buc. (Pe o rola de 1500) (cu TVA)
1500
€ 0,54
Buc. (Pe o rola de 1500) (fara TVA)
€ 0,643
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
80 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Lungime
6.1mm
Latime
5.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Inaltime
1.05mm