Documente tehnice
Specificatii
Channel Mode
Enhancement
Automotive Standard
AEC-Q101
Channel Type
N
Number of Elements per Chip
2
Transistor Configuration
Dual
Temperatura minima de lucru
-55 °C
Numar pini
8
Forward Diode Voltage
1.2V
Timp montare
Surface Mount
Minimum Gate Threshold Voltage
1.2V
Maximum Gate Threshold Voltage
2V
Temperatura maxima de lucru
+175 °C
Maximum Drain Source Voltage
80 V
Maximum Gate Source Voltage
±20 V
Inaltime
1.05mm
Maximum Power Dissipation
3.1 W
Latime
5.1mm
Lungime
6.1mm
Maximum Continuous Drain Current
74 A
Tip pachet
DFN
Maximum Drain Source Resistance
8.8 mΩ
Baterii
3 x AAA BatteryTypical Gate Charge @ Vgs
32 nC @ 10 V
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Buc. (Pe o rola de 1500) (fara TVA)
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Buc. (Pe o rola de 1500) (cu TVA)
1500
€ 1,27
Buc. (Pe o rola de 1500) (fara TVA)
€ 1,511
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Channel Mode
Enhancement
Automotive Standard
AEC-Q101
Channel Type
N
Number of Elements per Chip
2
Transistor Configuration
Dual
Temperatura minima de lucru
-55 °C
Numar pini
8
Forward Diode Voltage
1.2V
Timp montare
Surface Mount
Minimum Gate Threshold Voltage
1.2V
Maximum Gate Threshold Voltage
2V
Temperatura maxima de lucru
+175 °C
Maximum Drain Source Voltage
80 V
Maximum Gate Source Voltage
±20 V
Inaltime
1.05mm
Maximum Power Dissipation
3.1 W
Latime
5.1mm
Lungime
6.1mm
Maximum Continuous Drain Current
74 A
Tip pachet
DFN
Maximum Drain Source Resistance
8.8 mΩ
Baterii
3 x AAA BatteryTypical Gate Charge @ Vgs
32 nC @ 10 V