Documente tehnice
Specificatii
Marca
onsemiChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.6 A
Maximum Drain Source Voltage
20 V
Tip pachet
WDFN
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
120 mΩ, 200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Latime
2mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.75mm
Detalii produs
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
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100 - 490 | € 0,53 | € 5,30 |
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1000 - 2990 | € 0,39 | € 3,90 |
3000+ | € 0,37 | € 3,70 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.6 A
Maximum Drain Source Voltage
20 V
Tip pachet
WDFN
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
120 mΩ, 200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Latime
2mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.75mm
Detalii produs
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.