Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
266 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
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Buc. (Livrat pe rola) (fara TVA)
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Buc. (Livrat pe rola) (cu TVA)
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
266 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs