Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-150 V
Tip pachet
TO-220
Montare
Through Hole
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-150 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
4 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.9 x 4.5 x 9.2mm
Tara de origine
China
Detalii produs
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
Impachetare pentru productie (Tub)
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P.O.A.
Impachetare pentru productie (Tub)
5
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-150 V
Tip pachet
TO-220
Montare
Through Hole
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-150 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
4 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.9 x 4.5 x 9.2mm
Tara de origine
China
Detalii produs
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.