Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
94 W
Number of Transistors
1
Tip pachet
TO-3PF
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.7 x 5.7 x 24.7mm
Frecventa minima de auto-rezonanta
-55 °C
Gate Capacitance
2590pF
Temperatura maxima de lucru
+175 °C
Energy Rating
325mJ
Tara de origine
Korea, Republic Of
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€ 2,55
Each (In a Tube of 360) (fara TVA)
€ 3,034
Each (In a Tube of 360) (cu TVA)
360
Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
94 W
Number of Transistors
1
Tip pachet
TO-3PF
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.7 x 5.7 x 24.7mm
Frecventa minima de auto-rezonanta
-55 °C
Gate Capacitance
2590pF
Temperatura maxima de lucru
+175 °C
Energy Rating
325mJ
Tara de origine
Korea, Republic Of