Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.9mm
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Number of Elements per Chip
1
Inaltime
16.07mm
Forward Diode Voltage
1.3V
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
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P.O.A.
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P.O.A.
1000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.9mm
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Number of Elements per Chip
1
Inaltime
16.07mm
Forward Diode Voltage
1.3V
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China