Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220F
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Inaltime
16.07mm
Tara de origine
China
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 2) (cu TVA)
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€ 2,74
Buc. (Intr-un pachet de 2) (fara TVA)
€ 3,261
Buc. (Intr-un pachet de 2) (cu TVA)
2
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220F
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Inaltime
16.07mm
Tara de origine
China