Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Latime
3.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Inaltime
0.75mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,70
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,023
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 1,70
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,023
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 1,70 | € 17,00 |
100 - 490 | € 1,59 | € 15,90 |
500 - 990 | € 1,53 | € 15,30 |
1000 - 2990 | € 1,48 | € 14,80 |
3000+ | € 1,43 | € 14,30 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Latime
3.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Inaltime
0.75mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs