Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO220F
Dimensiune celula
SuperFET III
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Latime
4.6mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Inaltime
15.7mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO220F
Dimensiune celula
SuperFET III
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Latime
4.6mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Inaltime
15.7mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs