Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Serie
SuperFET III
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Temperatura maxima de lucru
+150 °C
Lungime
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Latime
5.3mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Inaltime
21.08mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Serie
SuperFET III
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Temperatura maxima de lucru
+150 °C
Lungime
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Latime
5.3mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Inaltime
21.08mm
Temperatura minima de lucru
-55 °C
Detalii produs