Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
50 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.67mm
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Incercati din nou mai tarziu
€ 0,96
Each (In a Tube of 50) (fara TVA)
€ 1,142
Each (In a Tube of 50) (cu TVA)
50
€ 0,96
Each (In a Tube of 50) (fara TVA)
€ 1,142
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 200 | € 0,96 | € 48,00 |
250 - 950 | € 0,90 | € 45,00 |
1000 - 2450 | € 0,87 | € 43,50 |
2500+ | € 0,84 | € 42,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
50 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.67mm
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.