Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-225
Timp montare
Through Hole
Numar pini
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.8 V dc
Inaltime
11.1mm
Latime
3mm
Maximum Power Dissipation
40 W
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
7.8 x 3 x 11.1mm
Temperatura maxima de lucru
+150 °C
Lungime
7.8mm
Tara de origine
China
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P.O.A.
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P.O.A.
500
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-225
Timp montare
Through Hole
Numar pini
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.8 V dc
Inaltime
11.1mm
Latime
3mm
Maximum Power Dissipation
40 W
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
7.8 x 3 x 11.1mm
Temperatura maxima de lucru
+150 °C
Lungime
7.8mm
Tara de origine
China