Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN/PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
30 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
420
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Numar pini
6
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Dimensiuni
2.2 x 1.35 x 1mm
Tara de origine
China
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Buc. (Pe o rola de 3000) (fara TVA)
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Buc. (Pe o rola de 3000) (cu TVA)
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN/PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
30 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
420
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Numar pini
6
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Dimensiuni
2.2 x 1.35 x 1mm
Tara de origine
China