Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.9mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,06
Buc. (Livrat pe rola) (fara TVA)
€ 0,071
Buc. (Livrat pe rola) (cu TVA)
100
€ 0,06
Buc. (Livrat pe rola) (fara TVA)
€ 0,071
Buc. (Livrat pe rola) (cu TVA)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 100 | € 0,06 | € 6,00 |
200 - 400 | € 0,05 | € 5,00 |
500 - 900 | € 0,05 | € 5,00 |
1000 - 1900 | € 0,04 | € 4,00 |
2000+ | € 0,03 | € 3,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.9mm
Detalii produs