Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-225AA
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
100µA
Dimensiuni
11.04 x 7.74 x 2.66mm
Temperatura minima de lucru
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
11.04mm
Inaltime
2.66mm
Latime
7.74mm
Maximum Power Dissipation
40 W
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
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P.O.A.
Impachetare pentru productie (Cutie)
5
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-225AA
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
100µA
Dimensiuni
11.04 x 7.74 x 2.66mm
Temperatura minima de lucru
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
11.04mm
Inaltime
2.66mm
Latime
7.74mm
Maximum Power Dissipation
40 W
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.