onsemi NXH80T120L2Q0P2TG IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount

Nr. stoc RS: 195-8776Producator: ON SemiconductorCod de producator: NXH80T120L2Q0P2TG
Vezi toate produsele din Tranzistoare IGBT

Documente tehnice

Specificatii

Marca

ON Semiconductor

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

158 W

Tip pachet

Q0PACK

Timp montare

Surface Mount

Channel Type

N

Numar pini

20

Dimensiuni

70.1 x 32.7 x 12.33mm

Temperatura maxima de lucru

+150 °C

Frecventa minima de auto-rezonanta

-40 °C

Informatii indisponibile despre stoc

Incercati din nou mai tarziu

Informatii indisponibile despre stoc

P.O.A.

onsemi NXH80T120L2Q0P2TG IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount

24

Disponibil in multiplu de 24
24P.O.A.
48P.O.A.
72P.O.A.
96P.O.A.
120P.O.A.
144P.O.A.
168P.O.A.
192P.O.A.
216P.O.A.
240P.O.A.
264P.O.A.
288P.O.A.
312P.O.A.
336P.O.A.
360P.O.A.

P.O.A.

onsemi NXH80T120L2Q0P2TG IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount
Informatii indisponibile despre stoc

24

Disponibil in multiplu de 24
24P.O.A.
48P.O.A.
72P.O.A.
96P.O.A.
120P.O.A.
144P.O.A.
168P.O.A.
192P.O.A.
216P.O.A.
240P.O.A.
264P.O.A.
288P.O.A.
312P.O.A.
336P.O.A.
360P.O.A.

Documente tehnice

Specificatii

Marca

ON Semiconductor

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

158 W

Tip pachet

Q0PACK

Timp montare

Surface Mount

Channel Type

N

Numar pini

20

Dimensiuni

70.1 x 32.7 x 12.33mm

Temperatura maxima de lucru

+150 °C

Frecventa minima de auto-rezonanta

-40 °C