Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
235 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
4+Tab
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
128 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NTMFS5C426N
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
235 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
4+Tab
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
128 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NTMFS5C426N
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V