Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
100 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.73mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Tara de origine
Czech Republic
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
100 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.73mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Tara de origine
Czech Republic
Detalii produs