Documente tehnice
Specificatii
Marca
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
267 W
Number of Transistors
1
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Channel Type
P
Numar pini
2+Tab
Transistor Configuration
Single
Dimensiuni
10.67 x 9.65 x 4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Gate Capacitance
1520pF
Temperatura maxima de lucru
+175 °C
Automotive Standard
AEC-Q101
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800
Documente tehnice
Specificatii
Marca
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
267 W
Number of Transistors
1
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Channel Type
P
Numar pini
2+Tab
Transistor Configuration
Single
Dimensiuni
10.67 x 9.65 x 4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Gate Capacitance
1520pF
Temperatura maxima de lucru
+175 °C
Automotive Standard
AEC-Q101