Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
ECH
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Latime
2.3mm
Transistor Material
Si
Inaltime
0.9mm
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P.O.A.
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P.O.A.
15
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
ECH
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Latime
2.3mm
Transistor Material
Si
Inaltime
0.9mm