Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Tip pachet
CPH
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Latime
1.6mm
Number of Elements per Chip
1
Inaltime
0.9mm
Tara de origine
Japan
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Tip pachet
CPH
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Latime
1.6mm
Number of Elements per Chip
1
Inaltime
0.9mm
Tara de origine
Japan
Detalii produs