Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
1.5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
1.58 nC @ 10 V
Inaltime
1.1mm
PRICED TO CLEAR
Yes
Tara de origine
China
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
1.5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
1.58 nC @ 10 V
Inaltime
1.1mm
PRICED TO CLEAR
Yes
Tara de origine
China
Detalii produs