Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
1.1pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
50
P.O.A.
50
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
1.1pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.