Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Tip pachet
TSOP
Montare
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Numar pini
6
Number of Elements per Chip
2
Dimensiuni
1 x 3.1 x 1.7mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Malaysia
Detalii produs
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,37
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,44
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 0,37
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,44
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 0,37 | € 3,70 |
50 - 90 | € 0,29 | € 2,90 |
100+ | € 0,23 | € 2,30 |
Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Tip pachet
TSOP
Montare
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Numar pini
6
Number of Elements per Chip
2
Dimensiuni
1 x 3.1 x 1.7mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Malaysia
Detalii produs
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.