Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
-5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-80 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-0.00005mA
Inaltime
1.7mm
Latime
3.7mm
Maximum Power Dissipation
1.25 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
6.7 x 3.7 x 1.7mm
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Tara de origine
China
Detalii produs
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
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P.O.A.
1000
P.O.A.
1000
Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
-5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-80 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-0.00005mA
Inaltime
1.7mm
Latime
3.7mm
Maximum Power Dissipation
1.25 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
6.7 x 3.7 x 1.7mm
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Tara de origine
China
Detalii produs