Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
55 V
Tip pachet
SOT-323 (SC-70)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
1 nC @ 8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1mm
Tara de origine
Malaysia
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P.O.A.
Impachetare pentru productie (Rola)
50
P.O.A.
Impachetare pentru productie (Rola)
50
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
55 V
Tip pachet
SOT-323 (SC-70)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
1 nC @ 8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1mm
Tara de origine
Malaysia