Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Latime
1.35mm
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
Malaysia
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,18
Buc. (Livrat pe rola) (fara TVA)
€ 0,214
Buc. (Livrat pe rola) (cu TVA)
200
€ 0,18
Buc. (Livrat pe rola) (fara TVA)
€ 0,214
Buc. (Livrat pe rola) (cu TVA)
200
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Latime
1.35mm
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
Malaysia
Detalii produs