Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,03
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,036
Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 0,03
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,036
Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Tara de origine
China
Detalii produs