Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
240 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Latime
4.19mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
5.33mm
Detalii produs
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,25
Each (Supplied in a Bag) (fara TVA)
€ 1,488
Each (Supplied in a Bag) (cu TVA)
10
€ 1,25
Each (Supplied in a Bag) (fara TVA)
€ 1,488
Each (Supplied in a Bag) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Punga |
---|---|---|
10 - 20 | € 1,25 | € 12,50 |
30 - 90 | € 1,14 | € 11,40 |
100+ | € 1,04 | € 10,40 |
Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
240 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Latime
4.19mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
5.33mm
Detalii produs
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.