Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
250 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Depletion
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
7.04 nC @ 1.5 V
Latime
5.1mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.85mm
Forward Diode Voltage
1.8V
Detalii produs
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
MOSFET Transistors, Microchip
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€ 2,40
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,856
Buc. (Intr-un pachet de 5) (cu TVA)
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€ 2,40
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,856
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
250 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Depletion
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
7.04 nC @ 1.5 V
Latime
5.1mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.85mm
Forward Diode Voltage
1.8V
Detalii produs
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.