Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
1000 V
Tip pachet
SOT-227B
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
890 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
25.07mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
38.23mm
Typical Gate Charge @ Vgs
305 nC @ 10 V
Inaltime
9.6mm
Dimensiune celula
Polar HiPerFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Tara de origine
Philippines
Detalii produs
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
1000 V
Tip pachet
SOT-227B
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
890 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
25.07mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
38.23mm
Typical Gate Charge @ Vgs
305 nC @ 10 V
Inaltime
9.6mm
Dimensiune celula
Polar HiPerFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Tara de origine
Philippines
Detalii produs
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS