Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Latime
4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Inaltime
1.5mm
Dimensiune celula
IRF9410
Temperatura minima de lucru
-55 °C
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P.O.A.
Standard
10
P.O.A.
Standard
10
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Latime
4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Inaltime
1.5mm
Dimensiune celula
IRF9410
Temperatura minima de lucru
-55 °C