Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
41 nC @ 5 V
Dimensiune celula
IRF7809AV
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
Forward Diode Voltage
1.3V
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P.O.A.
4000
P.O.A.
4000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
41 nC @ 5 V
Dimensiune celula
IRF7809AV
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
Forward Diode Voltage
1.3V