Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Dimensiune celula
IPP075N15N3 G
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
4.57mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Inaltime
11.17mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 4,87
Each (In a Tube of 50) (fara TVA)
€ 5,795
Each (In a Tube of 50) (cu TVA)
50
€ 4,87
Each (In a Tube of 50) (fara TVA)
€ 5,795
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 4,87 | € 243,50 |
100 - 200 | € 4,47 | € 223,50 |
250+ | € 4,01 | € 200,50 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Dimensiune celula
IPP075N15N3 G
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
4.57mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Inaltime
11.17mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V